Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC

In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SiC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model pr...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1995-10, Vol.67 (16), p.2385-2387
Main Authors: Kimoto, Tsunenobu, Itoh, Akira, Matsunami, Hiroyuki
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SiC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model proposed as ‘‘site-competition epitaxy.’’ However, doping efficiencies were almost independent of the C/Si ratio on (0001̄)C faces. Based on the results, the incorporation mechanism is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114555