Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures

Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/GaSb...

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Bibliographic Details
Published in:Applied physics letters 1995-08, Vol.67 (7), p.1001-1003
Main Authors: Dutta, P. S., Sreedhar, A. K., Bhat, H. L., Dubey, G. C., Kumar, Vikram, Dieguez, E.
Format: Article
Language:English
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Summary:Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/GaSb interfaces and the series resistance of the bulk a-Si:H interfacial layer. Space charge limited current in the interfacial layer gives rise to a voltage dependent resistance and increases the forward ‘‘turn-on’’ voltage. Furthermore, these structures exhibit extremely low reverse leakage currents and high reverse breakdown voltages. Significantly, rectifying junctions of a-Si:H/p-GaSb have been achieved with barrier heights of ∼0.4 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114581