Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of th...

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Bibliographic Details
Published in:Review of scientific instruments 1995-10, Vol.66 (10), p.4977-4980
Main Authors: Pearsall, T. P., Saban, Stevan R., Booth, James, Beard, Barrett T., Johnson, S. R.
Format: Article
Language:English
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Summary:Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5 °C for GaAs and less than 2.0 °C for Si over the temperature range 25 °C
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1146184