(111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition

(111)A CdTe epilayers have been grown directly on (111) silicon substrates with the low growth rate of less than 0.5 μm/h by metalorganic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the x-ray rocking curve of a 1 μm thick epilayer is 100 arcsec, which is much better t...

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Bibliographic Details
Published in:Applied physics letters 1995-11, Vol.67 (21), p.3138-3140
Main Authors: Ebe, H., Nishijima, Y.
Format: Article
Language:English
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Summary:(111)A CdTe epilayers have been grown directly on (111) silicon substrates with the low growth rate of less than 0.5 μm/h by metalorganic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the x-ray rocking curve of a 1 μm thick epilayer is 100 arcsec, which is much better than the value for (111)B CdTe/(100)Si. The low growth rate effects are deduced from the classical capillarity theory. The nucleation stages were examined by atomic force microscopy (AFM), which showed that the nuclei were less in number when growing with the low growth rate. The geometrical advantages of (111)A CdTe/(111) Si for annihilating the dislocations are also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114859