Nanometer-scale imaging of potential profiles in optically excited n - i - p - i heterostructure using Kelvin probe force microscopy

We report on measurements of the potential profile of a GaAs/AlGaAs n-i-p-i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub-100 nm spatial resolution the potential difference between n-i-p...

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Bibliographic Details
Published in:Applied physics letters 1995-11, Vol.67 (21), p.3069-3071
Main Authors: Chavez-Pirson, A., Vatel, O., Tanimoto, M., Ando, H., Iwamura, H., Kanbe, H.
Format: Article
Language:English
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Summary:We report on measurements of the potential profile of a GaAs/AlGaAs n-i-p-i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub-100 nm spatial resolution the potential difference between n-i-p-i layers with and without external optical excitation. The measured potential profiles, which have not been directly imaged previously, agree well with potential profiles calculated for optically excited n-i-p-i structures, but modified by band bending effects at the surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114867