Improvement in electrical properties of buried SiO2 layers by high-temperature oxidation

The density of defects in the buried oxide of implanted oxide silicon-on-insulator material which cause low resistance paths between the substrate and top silicon layer has been greatly reduced by high temperature oxidation. The mechanism for this is the diffusion of oxygen through the top silicon l...

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Bibliographic Details
Published in:Applied physics letters 1995-11, Vol.67 (22), p.3283-3285
Main Authors: Mrstik, B. J., McMarr, P. J., Hughes, H. L., Anc, M. J., Krull, W. A.
Format: Article
Language:English
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Summary:The density of defects in the buried oxide of implanted oxide silicon-on-insulator material which cause low resistance paths between the substrate and top silicon layer has been greatly reduced by high temperature oxidation. The mechanism for this is the diffusion of oxygen through the top silicon layer to the buried oxide, where it oxidizes chains of silicon atoms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115221