Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at hig...

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Bibliographic Details
Published in:Applied physics letters 1996-01, Vol.68 (2), p.275-277
Main Authors: Nakamura, Y., Klein, D. L., Tsai, J. S.
Format: Article
Language:English
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Summary:We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115661