Migration of compensating defects in p -type ZnSe during annealing

We annealed p-type, nitrogen-doped ZnSe grown by molecular-beam epitaxy and subsequently characterized the samples by photoluminescence spectroscopy, capacitance–voltage profiling, and secondary ion mass spectroscopy. We found that the decrease in active acceptor concentration upon annealing stems f...

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Bibliographic Details
Published in:Applied physics letters 1996-03, Vol.68 (11), p.1522-1524
Main Authors: Chen, Anthony L., Walukiewicz, Wladek, Duxstad, Kristin, Haller, Eugene E.
Format: Article
Language:English
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Summary:We annealed p-type, nitrogen-doped ZnSe grown by molecular-beam epitaxy and subsequently characterized the samples by photoluminescence spectroscopy, capacitance–voltage profiling, and secondary ion mass spectroscopy. We found that the decrease in active acceptor concentration upon annealing stems from compensation by defects that originate from the surface. By fitting the nitrogen acceptor profiles with solutions of the diffusion equation, we estimate the migration energy of the compensating defect to be 4.0±0.3 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115686