Photoluminescence of polycrystalline CuInSe2 thin films

The photoluminescence of CuInSe2 thin films grown by multisource physical vapor deposition is investigated over a wide composition range with a specially designed sample. Measurements as a function of excitation intensity, and temperature are correlated with the Cu/In ratio x of the films ranging fr...

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Bibliographic Details
Published in:Applied physics letters 1996-02, Vol.68 (8), p.1144-1146
Main Authors: Zott, S., Leo, K., Ruckh, M., Schock, H.-W.
Format: Article
Language:English
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Summary:The photoluminescence of CuInSe2 thin films grown by multisource physical vapor deposition is investigated over a wide composition range with a specially designed sample. Measurements as a function of excitation intensity, and temperature are correlated with the Cu/In ratio x of the films ranging from 1.47≤x≤0.46. All the Cu–rich samples (x≳1.0) show well-defined peak positions independent of the composition. In the slightly In-rich region (x=0.90) where the best absorber layers for high efficiency CuInSe2 solar cells are expected, two broad emission lines are ascribed to donor-acceptor pair transitions. For very In-rich samples (x
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115704