Epitaxial growth of highly conductive RuO2 thin films on (100) Si

• Published in: Applied physics letters 1996-02, Vol.68 (8), p.1069-1071
• Main Authors: Jia, Q. X., Song, S. G., Wu, X. D., Cho, J. H., Foltyn, S. R., Findikoglu, A. T., Smith, J. L.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.115715

Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates.