Tantalum deposition on and reaction with the hydrogen terminated diamond (100) surface studied by Auger electron and electron energy loss spectroscopy

The evolution of the tantalum/diamond interface upon room-temperature Ta deposition on the (100) surface of a boron doped, synthetically grown diamond single crystal was monitored by Auger electron spectroscopy (AES), ionization loss spectroscopy (ILS), and electron energy loss spectroscopy (ELS). C...

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Bibliographic Details
Published in:Applied physics letters 1996-04, Vol.68 (18), p.2508-2510
Main Authors: Pitter, M., Hugenschmidt, M. B., Behm, R. J.
Format: Article
Language:English
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Summary:The evolution of the tantalum/diamond interface upon room-temperature Ta deposition on the (100) surface of a boron doped, synthetically grown diamond single crystal was monitored by Auger electron spectroscopy (AES), ionization loss spectroscopy (ILS), and electron energy loss spectroscopy (ELS). Characteristic loss peaks indicate carbide formation at the interface from very low coverages on, reflecting the strong interaction between tantalum and carbon. Thicker layers of TaC are formed during subsequent thermal annealing by diffusion of carbon into the tantalum film, at the same time the topmost diamond region is transformed into poorly ordered graphitic carbon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115837