Growth of highly textured LiNbO3 thin film on Si with MgO buffer layer through the sol-gel process

Highly textured ferroelectric LiNbO3 thin films have been grown on MgO-buffered Si (100)/(111) through the sol-gel process under optimum conditions. These films show a high degree of c-axis orientation regardless of the orientation of the Si substrates. Structural properties of the films were strong...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1996-04, Vol.68 (18), p.2523-2525
Main Authors: Yoon, Jong-Gul, Kim, Kun
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Highly textured ferroelectric LiNbO3 thin films have been grown on MgO-buffered Si (100)/(111) through the sol-gel process under optimum conditions. These films show a high degree of c-axis orientation regardless of the orientation of the Si substrates. Structural properties of the films were strongly influenced by the thickness of the MgO buffer layer probably due to the strains induced by the lattice and the thermal mismatch. Optimum thickness of the MgO buffer layer was found to be about 50 nm for the growth of a highly textured LiNbO3 film. An epitaxial-like growth was observed by x-ray pole figure analysis for the film on MgO/Si(111) obtained under a rapid thermal process above 900 °C. The surface morphology investigated by atomic force microscopy showed a growth behavior of crystalline grains as the thermal process was varied.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115842