Shallow donor neutralization in CdTe:In by atomic hydrogen

Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150 °C. Depth profiling by capacitance-voltage measurements show passivation of approximately an order of magnitude at 150 °C...

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Bibliographic Details
Published in:Applied physics letters 1996-04, Vol.68 (17), p.2424-2426
Main Authors: Gurumurthy, Suma, Bhat, H. L., Sundersheshu, B., Bagai, R. K., Kumar, Vikram
Format: Article
Language:English
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Summary:Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150 °C. Depth profiling by capacitance-voltage measurements show passivation of approximately an order of magnitude at 150 °C and 50% at 170 °C. No visual surface damage is seen. Reverse bias annealing experiments show that atomic hydrogen drifts in a charged state in n-CdTe, with reactivation kinetics of the donors different from the other well studied semiconductors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116155