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Direct writing of GaAs optical waveguides by laser-assisted chemical vapor deposition
We demonstrate the direct writing of GaAs waveguide structures by selective area deposition using laser-assisted chemical vapor deposition (LCVD). The multimode waveguides have a Gaussian shape and a very smooth surface, and they exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capa...
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Published in: | Applied physics letters 1996-04, Vol.68 (15), p.2041-2042 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | We demonstrate the direct writing of GaAs waveguide structures by selective area deposition using laser-assisted chemical vapor deposition (LCVD). The multimode waveguides have a Gaussian shape and a very smooth surface, and they exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of selective growth of independent device structures, and hence the capability of monolithic integration of these devices for optoelectronic applications. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.116296 |