Near-edge x-ray absorption fine structure study of bonding modifications in BN thin films by ion implantation

Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N2+ at 180 k...

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Bibliographic Details
Published in:Applied physics letters 1996-05, Vol.68 (20), p.2816-2818
Main Authors: Jiménez, I., Jankowski, A., Terminello, L. J., Carlisle, J. A., Sutherland, D. G. J., Doll, G. L., Mantese, J. V., Tong, W. M., Shuh, D. K., Himpsel, F. J.
Format: Article
Language:English
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Summary:Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N2+ at 180 keV induces the formation of a significant proportion of sp3 bonding (cubic-like), and the formation of nitrogen void defects in the remaining sp2 BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116334