Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from t...

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Bibliographic Details
Published in:Applied physics letters 1996-05, Vol.68 (21), p.2968-2970
Main Authors: Ruff, M., Streb, D., Dankowski, S. U., Tautz, S., Kiesel, P., Knüpfer, B., Kneissl, M., Linder, N., Döhler, G. H., Keil, U. D.
Format: Article
Language:English
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Summary:We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental band gap but only weakly at the split-off band gap, in agreement with the theory of the Franz–Keldysh effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116371