Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consis...

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Bibliographic Details
Published in:Applied physics letters 1996-05, Vol.68 (22), p.3105-3107
Main Authors: Khan, Al-Sameen T., Berger, Paul R., Guarin, Fernando J., Iyer, Subramanian S.
Format: Article
Language:English
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Summary:Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116437