Photorefractive p - i - n diode quantum well operating at 1.55 μm

We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p...

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Bibliographic Details
Published in:Applied physics letters 1996-06, Vol.68 (25), p.3576-3578
Main Authors: De Matos, C., Le Corre, A., L’Haridon, H., Lambert, B., Salaün, S., Pleumeekers, J., Gosselin, S.
Format: Article
Language:English
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Summary:We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116642