Low resistance graded contacts to n -type ZnSe

The specific resistance of metal contacts to Cl-doped, n+-type ZnSe can be lowered by over one order of magnitude for comparable doping by fabricating a Zn1−xCdxSe ternary layer of the interface. Photoemission studies of the Al/Zn1−xCdxSe Schottky barriers, and current–voltage measurements indicate...

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Bibliographic Details
Published in:Applied physics letters 1996-01, Vol.68 (3), p.370-372
Main Authors: Lazzarino, M., Ozzello, T., Bratina, G., Paggel, J. J., Vanzetti, L., Sorba, L., Franciosi, A.
Format: Article
Language:English
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Summary:The specific resistance of metal contacts to Cl-doped, n+-type ZnSe can be lowered by over one order of magnitude for comparable doping by fabricating a Zn1−xCdxSe ternary layer of the interface. Photoemission studies of the Al/Zn1−xCdxSe Schottky barriers, and current–voltage measurements indicate that the decrease in the specific contact resistivity reflects the grading of the conduction band discontinuity across the heterostructure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116719