Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

In studying the effect of the ramping process on oxygen precipitation in Czochralski-grown silicon wafers in hydrogen annealing, we have found that the oxygen precipitate density in the bulk region depends on the ramping-up rate at temperatures between 900 and 1200 °C. Few oxygen defects are observe...

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Bibliographic Details
Published in:Applied physics letters 1996-01, Vol.68 (1), p.49-50
Main Authors: Izunome, Koji, Shirai, Hiroshi, Kashima, Kazuhiko, Yoshikawa, Jun, Hojo, Akimichi
Format: Article
Language:English
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Summary:In studying the effect of the ramping process on oxygen precipitation in Czochralski-grown silicon wafers in hydrogen annealing, we have found that the oxygen precipitate density in the bulk region depends on the ramping-up rate at temperatures between 900 and 1200 °C. Few oxygen defects are observed when the ramping-up rate is 30 °C/min or more. Decreasing the ramping-up rate exponentially increases the oxygen precipitate density. The nucleation for oxygen precipitates can therefore be controlled by adjusting the ramping-up rate during hydrogen annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116752