Surface reconstruction of zinc-blende GaN

We propose a model of the surface reconstruction for cubic GaN which accounts both for short- and long-range forces. Our analysis shows that short-range covalent contributions to the bond energies cannot by themselves explain the difference in stability of different surface configurations. Our analy...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1996-10, Vol.69 (16), p.2397-2399
Main Authors: Bykhovski, A. D., Shur, M. S.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose a model of the surface reconstruction for cubic GaN which accounts both for short- and long-range forces. Our analysis shows that short-range covalent contributions to the bond energies cannot by themselves explain the difference in stability of different surface configurations. Our analysis, which includes long-range ionic contributions, shows that at all typical molecular beam epitaxy (MBE) epitaxy temperatures the cubic GaN film with a free-carrier concentration larger than 1016 cm−3 should have a tendency to develop the surface reconstruction. The qualitative explanation of the reconstruction effects on Ga surface of (001) surface of cubic GaN can be linked to a large difference in atomic sizes of Ga and N.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117649