Ion assisted growth of diamond

Diamond crystallites up to 40 nm in size have been grown from a highly ionized plasma beam of acetylene for ion energies close to 100 eV per C atom and substrate temperatures above 450 °C. This shows that diamond can be grown by physical vapor deposition from an ion-rich plasma as well as by chemica...

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Bibliographic Details
Published in:Applied physics letters 1996-07, Vol.69 (4), p.497-499
Main Authors: Sattel, S., Robertson, J., Scheib, M., Ehrhardt, H.
Format: Article
Language:English
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Summary:Diamond crystallites up to 40 nm in size have been grown from a highly ionized plasma beam of acetylene for ion energies close to 100 eV per C atom and substrate temperatures above 450 °C. This shows that diamond can be grown by physical vapor deposition from an ion-rich plasma as well as by chemical vapor deposition from a radical-rich plasma. The formation mechanism is argued to be one of nucleation and growth rather than a stress induced transformation from graphite.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117765