Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility

The electrical characteristics of field-effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed. We demonstrate that both high field-effect mobilities (ca. 0.045 cm2/V s in the accumulation mode and 0.01 cm2/V s in the depletion mode), and relatively high on/off curr...

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Bibliographic Details
Published in:Applied physics letters 1996-12, Vol.69 (26), p.4108-4110
Main Authors: Bao, Zhenan, Dodabalapur, Ananth, Lovinger, Andrew J.
Format: Article
Language:English
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Summary:The electrical characteristics of field-effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed. We demonstrate that both high field-effect mobilities (ca. 0.045 cm2/V s in the accumulation mode and 0.01 cm2/V s in the depletion mode), and relatively high on/off current ratios (greater than 103) can be achieved. We find that the film quality and field-effect mobility are strongly dependent on the choice of solvents. In addition, treating a film with ammonia or heating to 100 °C under N2 can increase the on/off ratio without decreasing the mobility.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117834