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Electron spectroscopy study of the silver-diamond(100)-H interface
The interaction between silver and a boron doped diamond single crystal has been characterized by Auger electron spectroscopy, ionization loss spectroscopy, and low energy electron diffraction. Silver deposition (equivalent film thickness 3–15 Å) at room temperature results in the formation of silve...
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Published in: | Applied physics letters 1996-12, Vol.69 (26), p.4035-4037 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | The interaction between silver and a boron doped diamond single crystal has been characterized by Auger electron spectroscopy, ionization loss spectroscopy, and low energy electron diffraction. Silver deposition (equivalent film thickness 3–15 Å) at room temperature results in the formation of silver islands. During subsequent thermal annealing, silver islands cluster and finally desorb. In contrast to other metals, neither intermixing nor graphitization or carbide formation at the silver-diamond interface are observed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.117862 |