p-i-n-i-p photodetector proposal and integration with waveguides

We propose a photodiode configuration suited for waveguide integration, and top and side illumination. This configuration based on a pair of p-i-n photodiodes, laid out alongside of one another, requires only one metallization type, and therefore, reduces the number of technological steps. A wavegui...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1996-07, Vol.69 (5), p.605-607
Main Authors: Bruno, A., Huet, F., Carre, M., Foucher, M., Billard, M., Devaux, F., Brandon, J., Menigaux, L., Carenco, A., Scavennec, A.
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose a photodiode configuration suited for waveguide integration, and top and side illumination. This configuration based on a pair of p-i-n photodiodes, laid out alongside of one another, requires only one metallization type, and therefore, reduces the number of technological steps. A waveguide–photodiode integration illustrates this photodetector concept. The single heterostructure waveguide integrated evanescently with this p-i-n-i-p photodetector exhibits a 19 GHz bandwidth, as a result of the very low (30 fF) capacitance of a 20 μm long detector. Related to its symmetrical features, this p-i-n-i-p photodetector is a means to improve fabrication yield of integrated optoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117921