p-i-n-i-p photodetector proposal and integration with waveguides

We propose a photodiode configuration suited for waveguide integration, and top and side illumination. This configuration based on a pair of p-i-n photodiodes, laid out alongside of one another, requires only one metallization type, and therefore, reduces the number of technological steps. A wavegui...

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Published in:Applied physics letters 1996-07, Vol.69 (5), p.605-607
Main Authors: Bruno, A., Huet, F., Carre, M., Foucher, M., Billard, M., Devaux, F., Brandon, J., Menigaux, L., Carenco, A., Scavennec, A.
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container_end_page 607
container_issue 5
container_start_page 605
container_title Applied physics letters
container_volume 69
creator Bruno, A.
Huet, F.
Carre, M.
Foucher, M.
Billard, M.
Devaux, F.
Brandon, J.
Menigaux, L.
Carenco, A.
Scavennec, A.
description We propose a photodiode configuration suited for waveguide integration, and top and side illumination. This configuration based on a pair of p-i-n photodiodes, laid out alongside of one another, requires only one metallization type, and therefore, reduces the number of technological steps. A waveguide–photodiode integration illustrates this photodetector concept. The single heterostructure waveguide integrated evanescently with this p-i-n-i-p photodetector exhibits a 19 GHz bandwidth, as a result of the very low (30 fF) capacitance of a 20 μm long detector. Related to its symmetrical features, this p-i-n-i-p photodetector is a means to improve fabrication yield of integrated optoelectronic devices.
doi_str_mv 10.1063/1.117921
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title p-i-n-i-p photodetector proposal and integration with waveguides
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