Ga segregation in DyBa2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/DyBa2Cu3O7−δ ramp-type Josephson junctions

Ramp-type Josephson junctions with highly doped PrBa2Cu3−xGaxO7−δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating ele...

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Bibliographic Details
Published in:Applied physics letters 1997-03, Vol.70 (9), p.1167-1169
Main Authors: Verbist, K., Lebedev, O. I., Van Tendeloo, G., Verhoeven, M. A. J., Rijnders, A. J. H. M., Blank, D. H. A., Rogalla, H.
Format: Article
Language:English
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Summary:Ramp-type Josephson junctions with highly doped PrBa2Cu3−xGaxO7−δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1–0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7−δ materials (RE=rare earth).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118515