Bowing parameter of the band-gap energy of GaNxAs1−x

We report a study of nitrogen incorporation in GaAs using a N rf plasma source. The N composition can be increased by lowering the growth temperature. X-ray diffraction shows no phase separation. Optical absorption measurements indicate that GaNxAs1−x is a direct band-gap material in the N compositi...

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Published in:Applied physics letters 1997-03, Vol.70 (12), p.1608-1610
Main Authors: Bi, W. G., Tu, C. W.
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Language:English
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description We report a study of nitrogen incorporation in GaAs using a N rf plasma source. The N composition can be increased by lowering the growth temperature. X-ray diffraction shows no phase separation. Optical absorption measurements indicate that GaNxAs1−x is a direct band-gap material in the N composition range studied (x⩽14.8%), rather than a semimetal, contrary to theoretical predictions based on Van Vechten’s model. Analyzing the N composition dependence of the band-gap energy of the alloy indicates a composition-dependent bowing parameter, consistent with the first-principles supercell calculations [L. Bellaiche, S. H. Wei, and A. Zunger, Phys. Rev. B 54, 17 568 (1996)].
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title Bowing parameter of the band-gap energy of GaNxAs1−x
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