Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions

We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent...

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Published in:Applied physics letters 1997-03, Vol.70 (13), p.1769-1771
Main Authors: Sun, J. Z., Krusin-Elbaum, L., Duncombe, P. R., Gupta, A., Laibowitz, R. B.
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cited_by cdi_FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33
cites cdi_FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33
container_end_page 1771
container_issue 13
container_start_page 1769
container_title Applied physics letters
container_volume 70
creator Sun, J. Z.
Krusin-Elbaum, L.
Duncombe, P. R.
Gupta, A.
Laibowitz, R. B.
description We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_118651</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_118651</sourcerecordid><originalsourceid>FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33</originalsourceid><addsrcrecordid>eNotkE9LAzEUxIMoWKvgR8jRg1vf23Szu0cpWoWCl3pe8udtTe0mS5IK_fau1NPMD2bmMIzdIywQpHjCBWIjK7xgM4S6LsSEl2wGAKKQbYXX7Cal_YRVKcSMmS0NI0WVj5G4pZG8JZ8fuQ--CF-DM3xQO085REouZeUNcee5DSNZPhXDT_p2maaU3ymvJpejO6gTRb4_epNd8OmWXfXqkOjuX-fs8_Vlu3orNh_r99XzpjAC61w0WmNTIWiry5ZaWU4IUkKvGrlc9o1VEoSttazLZgkCZNuWRtakK6G0JSHm7OG8a2JIKVLfjdENKp46hO7vnA678zniF1W-WE4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions</title><source>AIP Digital Archive</source><creator>Sun, J. Z. ; Krusin-Elbaum, L. ; Duncombe, P. R. ; Gupta, A. ; Laibowitz, R. B.</creator><creatorcontrib>Sun, J. Z. ; Krusin-Elbaum, L. ; Duncombe, P. R. ; Gupta, A. ; Laibowitz, R. B.</creatorcontrib><description>We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.118651</identifier><language>eng</language><ispartof>Applied physics letters, 1997-03, Vol.70 (13), p.1769-1771</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33</citedby><cites>FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sun, J. Z.</creatorcontrib><creatorcontrib>Krusin-Elbaum, L.</creatorcontrib><creatorcontrib>Duncombe, P. R.</creatorcontrib><creatorcontrib>Gupta, A.</creatorcontrib><creatorcontrib>Laibowitz, R. B.</creatorcontrib><title>Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions</title><title>Applied physics letters</title><description>We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEUxIMoWKvgR8jRg1vf23Szu0cpWoWCl3pe8udtTe0mS5IK_fau1NPMD2bmMIzdIywQpHjCBWIjK7xgM4S6LsSEl2wGAKKQbYXX7Cal_YRVKcSMmS0NI0WVj5G4pZG8JZ8fuQ--CF-DM3xQO085REouZeUNcee5DSNZPhXDT_p2maaU3ymvJpejO6gTRb4_epNd8OmWXfXqkOjuX-fs8_Vlu3orNh_r99XzpjAC61w0WmNTIWiry5ZaWU4IUkKvGrlc9o1VEoSttazLZgkCZNuWRtakK6G0JSHm7OG8a2JIKVLfjdENKp46hO7vnA678zniF1W-WE4</recordid><startdate>19970331</startdate><enddate>19970331</enddate><creator>Sun, J. Z.</creator><creator>Krusin-Elbaum, L.</creator><creator>Duncombe, P. R.</creator><creator>Gupta, A.</creator><creator>Laibowitz, R. B.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970331</creationdate><title>Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions</title><author>Sun, J. Z. ; Krusin-Elbaum, L. ; Duncombe, P. R. ; Gupta, A. ; Laibowitz, R. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, J. Z.</creatorcontrib><creatorcontrib>Krusin-Elbaum, L.</creatorcontrib><creatorcontrib>Duncombe, P. R.</creatorcontrib><creatorcontrib>Gupta, A.</creatorcontrib><creatorcontrib>Laibowitz, R. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sun, J. Z.</au><au>Krusin-Elbaum, L.</au><au>Duncombe, P. R.</au><au>Gupta, A.</au><au>Laibowitz, R. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions</atitle><jtitle>Applied physics letters</jtitle><date>1997-03-31</date><risdate>1997</risdate><volume>70</volume><issue>13</issue><spage>1769</spage><epage>1771</epage><pages>1769-1771</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures.</abstract><doi>10.1063/1.118651</doi><tpages>3</tpages></addata></record>
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title Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T22%3A28%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature%20dependent,%20non-ohmic%20magnetoresistance%20in%20doped%20perovskite%20manganate%20trilayer%20junctions&rft.jtitle=Applied%20physics%20letters&rft.au=Sun,%20J.%20Z.&rft.date=1997-03-31&rft.volume=70&rft.issue=13&rft.spage=1769&rft.epage=1771&rft.pages=1769-1771&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.118651&rft_dat=%3Ccrossref%3E10_1063_1_118651%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c317t-8bb18510bdb29e962b180660fa8644f8da603d7b672840306992c67eb53abde33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true