Dynamic growth effects during low-pressure deposition of diamond films

Diamond films were deposited in a modified electron–cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Film...

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Bibliographic Details
Published in:Applied physics letters 1997-04, Vol.70 (15), p.1974-1976
Main Authors: Gilbert, Donald R., Singh, Rajiv, Clarke, Roy, Murugkar, S.
Format: Article
Language:English
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Summary:Diamond films were deposited in a modified electron–cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high “nucleation” densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118796