Luminescences from localized states in InGaN epilayers

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1−xN(x

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Bibliographic Details
Published in:Applied physics letters 1997-05, Vol.70 (21), p.2822-2824
Main Authors: Chichibu, S., Azuhata, T., Sota, T., Nakamura, S.
Format: Article
Language:English
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Description
Summary:Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1−xN(x
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119013