20 GHz high performance planar Si/InGaAs p-i-n photodetector

Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface.

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Bibliographic Details
Published in:Applied physics letters 1997-05, Vol.70 (18), p.2449-2451
Main Authors: Levine, B. F., Hawkins, A. R., Hiu, S., Tseng, B. J., King, C. A., Gruezke, L. A., Johnson, R. W., Zolnowski, D. R., Bowers, J. E.
Format: Article
Language:English
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Description
Summary:Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119085