Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions

The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1997-06, Vol.70 (24), p.3188-3190
Main Authors: Kurtz, S. R., Allerman, A. A., Biefeld, R. M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3
cites cdi_FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3
container_end_page 3190
container_issue 24
container_start_page 3188
container_title Applied physics letters
container_volume 70
creator Kurtz, S. R.
Allerman, A. A.
Biefeld, R. M.
description The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μW of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K.
doi_str_mv 10.1063/1.119154
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_119154</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_119154</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3</originalsourceid><addsrcrecordid>eNotkE1LAzEYhIMouFbBn5Cjl7R5k81-HEtRW6go2PuSTd5sI9tsSVal_94t9fTMHGYGhpBH4HPghVzAHKAGlV-RDHhZMglQXZOMcy5ZUSu4JXcpfU1WCSkz4t-89cFFHdHSXieMieowSd_tR4YHP44-dNT6wWKiv37c001Yps92ccYHTWPUPqBlvT5hpOn7iLHXU8gg1Wb0P0gjdn4I6Z7cON0nfPjnjOxennerNdu-v25Wyy0zolLTpKktFlqCqdoKBNhcF7VQvDUyz61oa2OcdCIXJVQCnEChdOHaktcClUE5I0-XWhOHlCK65hj9QcdTA7w5P9RAc3lI_gHRbVns</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions</title><source>AIP Digital Archive</source><creator>Kurtz, S. R. ; Allerman, A. A. ; Biefeld, R. M.</creator><creatorcontrib>Kurtz, S. R. ; Allerman, A. A. ; Biefeld, R. M.</creatorcontrib><description>The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μW of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.119154</identifier><language>eng</language><ispartof>Applied physics letters, 1997-06, Vol.70 (24), p.3188-3190</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3</citedby><cites>FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kurtz, S. R.</creatorcontrib><creatorcontrib>Allerman, A. A.</creatorcontrib><creatorcontrib>Biefeld, R. M.</creatorcontrib><title>Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions</title><title>Applied physics letters</title><description>The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μW of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMouFbBn5Cjl7R5k81-HEtRW6go2PuSTd5sI9tsSVal_94t9fTMHGYGhpBH4HPghVzAHKAGlV-RDHhZMglQXZOMcy5ZUSu4JXcpfU1WCSkz4t-89cFFHdHSXieMieowSd_tR4YHP44-dNT6wWKiv37c001Yps92ccYHTWPUPqBlvT5hpOn7iLHXU8gg1Wb0P0gjdn4I6Z7cON0nfPjnjOxennerNdu-v25Wyy0zolLTpKktFlqCqdoKBNhcF7VQvDUyz61oa2OcdCIXJVQCnEChdOHaktcClUE5I0-XWhOHlCK65hj9QcdTA7w5P9RAc3lI_gHRbVns</recordid><startdate>19970616</startdate><enddate>19970616</enddate><creator>Kurtz, S. R.</creator><creator>Allerman, A. A.</creator><creator>Biefeld, R. M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970616</creationdate><title>Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions</title><author>Kurtz, S. R. ; Allerman, A. A. ; Biefeld, R. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kurtz, S. R.</creatorcontrib><creatorcontrib>Allerman, A. A.</creatorcontrib><creatorcontrib>Biefeld, R. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kurtz, S. R.</au><au>Allerman, A. A.</au><au>Biefeld, R. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions</atitle><jtitle>Applied physics letters</jtitle><date>1997-06-16</date><risdate>1997</risdate><volume>70</volume><issue>24</issue><spage>3188</spage><epage>3190</epage><pages>3188-3190</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μW of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K.</abstract><doi>10.1063/1.119154</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1997-06, Vol.70 (24), p.3188-3190
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_119154
source AIP Digital Archive
title Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T22%3A40%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Midinfrared%20lasers%20and%20light-emitting%20diodes%20with%20InAsSb/InAsP%20strained-layer%20superlattice%20active%20regions&rft.jtitle=Applied%20physics%20letters&rft.au=Kurtz,%20S.%20R.&rft.date=1997-06-16&rft.volume=70&rft.issue=24&rft.spage=3188&rft.epage=3190&rft.pages=3188-3190&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.119154&rft_dat=%3Ccrossref%3E10_1063_1_119154%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c285t-ec9de6a31c8b8121d4a69250bc344d2b9ccf3f24271821f2e25a6fb7092e5ce3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true