Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Er, together with oxygen or fluorine as co-dopants, has been incorporated into Si during molecular beam epitaxial growth using co-evaporation of Si and Er containing compounds. The Er doping concentration using both Er2O3 and ErF3 can reach a level of ∼5×1019 cm−3 without precipitation, which is at...

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Bibliographic Details
Published in:Applied physics letters 1997-06, Vol.70 (25), p.3383-3385
Main Authors: Ni, W.-X., Joelsson, K. B., Du, C.-X., Buyanova, I. A., Pozina, G., Chen, W. M., Hansson, G. V., Monemar, B., Cardenas, J., Svensson, B. G.
Format: Article
Language:English
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Summary:Er, together with oxygen or fluorine as co-dopants, has been incorporated into Si during molecular beam epitaxial growth using co-evaporation of Si and Er containing compounds. The Er doping concentration using both Er2O3 and ErF3 can reach a level of ∼5×1019 cm−3 without precipitation, which is at least one order of magnitude higher than a previously reported solid solubility limit for Er in Si. Growth, structural, and luminescence characterization of these Er/O and Er/F doped Si samples are reported. In particular, 1.54 μm electroluminescence has been observed from Er/O doped Si layers at room temperature through hot electron impact excitation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119178