Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device structure consists of a MQW doped with Fe (1017 cm−3) isolated from the doped contact by intrinsic standoff layers. The photocarriers generated by the pump pulse...

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Bibliographic Details
Published in:Applied physics letters 1997-06, Vol.70 (26), p.3591-3593
Main Authors: De Matos, C., Le Corre, A., L’Haridon, H., Gosselin, S., Lambert, B.
Format: Article
Language:English
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Summary:Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device structure consists of a MQW doped with Fe (1017 cm−3) isolated from the doped contact by intrinsic standoff layers. The photocarriers generated by the pump pulse are trapped in the MQW and screen the applied electric field in the MQW. Output diffraction efficiency of 0.2% is measured in a nondegenerate four-wave-mixing configuration and the rise time of the diffraction signal reaches 200 ns.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119242