Preparation and characterization of sol-gel derived Er3+: Al2O3-SiO2 planar waveguides

Er 3+ doped aluminosilicate thin films were prepared on silica and silica Si substrates by the sol-gel method. The Er ion concentration was varied from 0.25% to 1%. Fluorescences of Er ions in the visible and infrared regions were characterized. Green and red up-conversion fluorescences centered at...

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Published in:Applied physics letters 1997-07, Vol.71 (4), p.428-430
Main Authors: Benatsou, M., Capoen, B., Bouazaoui, M., Tchana, W., Vilcot, J. P.
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Language:English
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description Er 3+ doped aluminosilicate thin films were prepared on silica and silica Si substrates by the sol-gel method. The Er ion concentration was varied from 0.25% to 1%. Fluorescences of Er ions in the visible and infrared regions were characterized. Green and red up-conversion fluorescences centered at 548 and 655 nm for, respectively, the (2H11/2+4S3/2)→4I15/2 and 2F9/2→4I15/2 were observed. A broadband peak was observed at 1531 nm corresponding to the 4I13/2 → 4I15/2 transition, with the full width at half-maximum of 47 nm comparable to those prepared by other methods. The fluorescence lifetime of the 4I13/2 excited state was found to be constant and equal to 3.5 ms until a high Er doping of 0.5 at. %.
doi_str_mv 10.1063/1.119569
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title Preparation and characterization of sol-gel derived Er3+: Al2O3-SiO2 planar waveguides
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