Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs

The conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined by far-infrared optically detected cyclotron resonance experiments. The high ωτ-value (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance. Th...

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Bibliographic Details
Published in:Applied physics letters 1997-08, Vol.71 (8), p.1116-1117
Main Authors: Drechsler, M., Meyer, B. K., Hofmann, D. M., Ruppert, P., Hommel, D.
Format: Article
Language:English
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Summary:The conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined by far-infrared optically detected cyclotron resonance experiments. The high ωτ-value (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance. The splitting is 8 mT in agreement with theoretical predictions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119744