Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast

In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implanta...

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Bibliographic Details
Published in:Applied physics letters 1997-08, Vol.71 (5), p.575-577
Main Authors: Lahrech, A., Bachelot, R., Gleyzes, P., Boccara, A. C.
Format: Article
Language:English
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Summary:In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implantation in silicon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119798