Si 1−y C y / Si (001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

Preparation of pseudomorphic Si1−yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high-temperature cell has been studied. Thick (≈2000 Å) homogenous Si1−yCy layers, y⩽1.5%, and Si1−yCy/Si multiple quantum well (MQW) structures, y⩽8%, have been pr...

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Bibliographic Details
Published in:Applied physics letters 1997-08, Vol.71 (5), p.653-655
Main Authors: Joelsson, K. B., Ni, W.-X, Pozina, G., Radamson, H. H., Hansson, G. V.
Format: Article
Language:English
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Summary:Preparation of pseudomorphic Si1−yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high-temperature cell has been studied. Thick (≈2000 Å) homogenous Si1−yCy layers, y⩽1.5%, and Si1−yCy/Si multiple quantum well (MQW) structures, y⩽8%, have been prepared. There is a growth temperature dependent surface roughness accumulating during the growth sequence that can lead to reduction of C induced strain. Temperature modulation during growth has been used to suppress this effect. Near band gap photoluminescence is reported from Si1−yCy/Si MQW structures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119819