Photoluminescence of InGaAs/GaAs single quantum well adjacent to a selectively oxidized AlAs layer

Photoluminescence (PL) has been used to characterize an InGaAs/GaAs single quantum well (SQW) adjacent to a selectively oxidized AlAs layer. For a direct interface between the SQW and AlAs, the room temperature PL intensity is drastically reduced after oxidation indicating the presence of an efficie...

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Bibliographic Details
Published in:Applied physics letters 1997-09, Vol.71 (10), p.1394-1396, Article 1394
Main Authors: Pratt, A. R., Takamori, T., Kamijoh, T.
Format: Article
Language:English
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Summary:Photoluminescence (PL) has been used to characterize an InGaAs/GaAs single quantum well (SQW) adjacent to a selectively oxidized AlAs layer. For a direct interface between the SQW and AlAs, the room temperature PL intensity is drastically reduced after oxidation indicating the presence of an efficient non-radiative pathway. However, a 20 nm AlGaAs layer grown between the SQW and the AlAs effectively isolates the SQW and yields a luminescence efficiency after oxidation identical to that of the as grown material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119903