A concept for nonvolatile memories

A concept for nonvolatile memories is proposed in which a unique combination of a Schottky junction with tunable barrier height and an adjacent electron potential well is used. A proof-of-concept demonstration is given for such a class of memory devices using ZnCdMgSe/InP heterostructures.

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Bibliographic Details
Published in:Applied physics letters 1997-10, Vol.71 (17), p.2487-2489
Main Authors: Shum, Kai, Zhou, Jianqin, Zhang, Wei, Zeng, Linfei, Tamargo, Maria C.
Format: Article
Language:English
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Summary:A concept for nonvolatile memories is proposed in which a unique combination of a Schottky junction with tunable barrier height and an adjacent electron potential well is used. A proof-of-concept demonstration is given for such a class of memory devices using ZnCdMgSe/InP heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120096