Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015–1019...

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Bibliographic Details
Published in:Applied physics letters 1997-11, Vol.71 (19), p.2812-2814
Main Authors: Lubben, D., Eres, G., Jellison, G. E., Westbrook, R. D., Wood, R. F.
Format: Article
Language:English
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Summary:Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015–1019 cm−2) for films deposited between 650 and 800 °C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm−2, respectively, with fill factors as high as 70%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120194