High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-...

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Published in:Applied physics letters 1997-12, Vol.71 (22), p.3251-3253
Main Authors: Fuchs, F., Weimer, U., Pletschen, W., Schmitz, J., Ahlswede, E., Walther, M., Wagner, J., Koidl, P.
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container_issue 22
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container_title Applied physics letters
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description The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kΩ cm2 leading to a Johnson-noise-limited detectivity in excess of 1×1012 cm√Hz/W.
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title High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
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