Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy

A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of ∼150 nm. The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequen...

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Published in:Applied physics letters 1998-03, Vol.72 (12), p.1478-1480
Main Authors: Webster, S., Batchelder, D. N., Smith, D. A.
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Language:English
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description A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of ∼150 nm. The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequency of the 520 cm−1 Raman band with position has been used to estimate the residual stresses associated with the deformation. The measurements demonstrate the feasibility of nondestructive, submicron stress measurement in semiconductors by near-field Raman spectroscopy.
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source AIP_美国物理联合会现刊（与NSTL共建）; AIP_美国物理联合会期刊回溯（NSTL购买）
title Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy
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