Gain characteristics of InGaN/GaN quantum well diode lasers

We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy.

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Bibliographic Details
Published in:Applied physics letters 1998-03, Vol.72 (12), p.1418-1420
Main Authors: Song, Y.-K., Kuball, M., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Leonard, M., Kong, H. S., Dieringer, H., Edmond, J.
Format: Article
Language:English
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Summary:We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120607