Spin relaxation of excitons in zero-dimensional InGaAs quantum disks

We report the observation of spin relaxation of excitons in zero-dimensional semiconductor nanostructures. The spin relaxation is measured in InGaAs quantum disks by using a polarization dependent time-resolved photoluminescence method. The spin relaxation time in a zero-dimensional quantum disk is...

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Published in:Applied physics letters 1998-03, Vol.72 (11), p.1341-1343
Main Authors: Gotoh, H., Ando, H., Kamada, H., Chavez-Pirson, A., Temmyo, J.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c291t-1eee198b6084efb47279ba9fed4cf67acc53add5d3b2eb334c48f94260fe75dd3
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container_end_page 1343
container_issue 11
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container_title Applied physics letters
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creator Gotoh, H.
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Kamada, H.
Chavez-Pirson, A.
Temmyo, J.
description We report the observation of spin relaxation of excitons in zero-dimensional semiconductor nanostructures. The spin relaxation is measured in InGaAs quantum disks by using a polarization dependent time-resolved photoluminescence method. The spin relaxation time in a zero-dimensional quantum disk is as long as 0.9 ns at 4 K, which is almost twice as long as the radiative recombination lifetime and is considerably longer than that in quantum wells. The temperature dependence of the spin relaxation time suggests the importance of exciton–acoustic phonon interaction.
doi_str_mv 10.1063/1.120988
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title Spin relaxation of excitons in zero-dimensional InGaAs quantum disks
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