Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition

Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×1012 cm−2 have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness of about 200 Å, a maxim...

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Bibliographic Details
Published in:Applied physics letters 1998-03, Vol.72 (10), p.1202-1204
Main Authors: Gurtovoi, V. L., Valyaev, V. V., Shapoval, S. Yu, Pustovit, A. N.
Format: Article
Language:English
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Summary:Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×1012 cm−2 have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness of about 200 Å, a maximum in conductivity is observed, which exceeds the conductivity of a single delta-doped layer with the same total concentration by 30% and 20% at 300 and 77 K. The mobility and concentration as a function of spacer thickness are also presented and analyzed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121013