Generation of millimeter waves with a GaAs/AlAs superlattice oscillator

We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density...

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Bibliographic Details
Published in:Applied physics letters 1998-03, Vol.72 (12), p.1498-1500
Main Authors: Schomburg, E., Brandl, S., Hofbeck, K., Blomeier, T., Grenzer, J., Ignatov, A. A., Renk, K. F., Pavel’ev, D. G., Koschurinov, Yu, Ustinov, V., Zhukov, A., Kovsch, A., Ivanov, S., Kop’ev, P. S.
Format: Article
Language:English
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Summary:We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density domains. The oscillator delivered, at an efficiency of 0.2% for the conversion of electrical power to radiation power, a power of 100 μW in a bandwidth of the order of 200 kHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121038