Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates at 550 °C by plasma-enhanced metalorganic chemical vapor deposition. A BTO (Bi4Ti3O12 or Bi2Ti4O11) phase formed at the interface between SBT films and Pt/Ti/SiO2/Si during the SBT d...

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Bibliographic Details
Published in:Applied physics letters 1998-03, Vol.72 (11), p.1374-1376
Main Authors: Seong, Nack-Jin, Yang, Cheol-Hoon, Shin, Woong-Chul, Yoon, Soon-Gil
Format: Article
Language:English
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Summary:Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates at 550 °C by plasma-enhanced metalorganic chemical vapor deposition. A BTO (Bi4Ti3O12 or Bi2Ti4O11) phase formed at the interface between SBT films and Pt/Ti/SiO2/Si during the SBT deposition at 550 °C. The BTO phase decreased the leakage current density of the SBT films. The leakage current densities of SBT films deposited on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates were about 5.0×10−8 and 5.0×10−7 A/cm2 at an applied field of 300 kV/cm, respectively. The SBT films were controlled by Schottky emission. The Schottky barrier heights of SBT films deposited on Pt/Ti/SiO2/Si and Pt/SiO2/Si were about 1.2 and 0.8 eV, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121059