High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800–850 nm wavelength operation

High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The...

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Bibliographic Details
Published in:Applied physics letters 1998-05, Vol.72 (21), p.2727-2729
Main Authors: Ünlü, M. S., Gökkavas, M., Onat, B. M., Ata, E., Özbay, E., Mirin, R. P., Knopp, K. J., Bertness, K. A., Christensen, D. H.
Format: Article
Language:English
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Summary:High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121073